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BUK9Y12-55B,115

MOSFET N-CH 55V 61.8A LFPAK

Manufacturer: Nexperia USA Inc.
Origchip NO: 554-BUK9Y12-55B,115
Package: SC-100, SOT-669
Datasheet: PDF
Stock: 868
Description: MOSFET N-CH 55V 61.8A LFPAK (Kg)

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Details

Tags

Parameters
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	106W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	106W
Case Connection	DRAIN
Turn On Delay Time	29 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	61.8A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 5V
Rise Time	78ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±15V
Fall Time (Typ)	63 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	61.8A
JEDEC-95 Code	MO-235
Gate to Source Voltage (Vgs)	15V
Max Dual Supply Voltage	55V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING