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BUK9K45-100E,115

MOSFET 2N-CH 100V 21A LFPAK56D

Manufacturer: Nexperia USA Inc.
Origchip NO: 554-BUK9K45-100E,115
Package: SOT-1205, 8-LFPAK56
Datasheet: PDF
Stock: 830
Description: MOSFET 2N-CH 100V 21A LFPAK56D (Kg)

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Details

Tags

Parameters
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Additional Feature	AVALANCHE RATED
Max Power Dissipation	53W
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	8
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	53W
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	42m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2152pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	33.5nC @ 10V
Rise Time	8.47ns
Fall Time (Typ)	27.75 ns
Turn-Off Delay Time	41.34 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	10V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.045Ohm
Drain to Source Breakdown Voltage	100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SOT-1205, 8-LFPAK56
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ