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BUK98150-55A/CUF

MOSFET N-CH 55V 5.5A SOT223

Manufacturer: Nexperia USA Inc.
Origchip NO: 554-BUK98150-55A/CUF
Package: TO-261-4, TO-261AA
Datasheet: PDF
Stock: 937
Description: MOSFET N-CH 55V 5.5A SOT223 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	8W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	137m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	320pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Gate Charge (Qg) (Max) @ Vgs	5.3nC @ 5V
Rise Time	57ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±15V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	5.5A
Gate to Source Voltage (Vgs)	15V
Max Dual Supply Voltage	55V
Drain-source On Resistance-Max	0.161Ohm
Pulsed Drain Current-Max (IDM)	22A
Avalanche Energy Rating (Eas)	22 mJ