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BUK7Y18-75B,115

MOSFET N-CH 75V 49A LFPAK

Manufacturer: Nexperia USA Inc.
Origchip NO: 554-BUK7Y18-75B,115
Package: SC-100, SOT-669
Datasheet: PDF
Stock: 936
Description: MOSFET N-CH 75V 49A LFPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Operating Mode	ENHANCEMENT MODE
Power Dissipation	105W
Case Connection	DRAIN
Turn On Delay Time	18.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2173pF @ 25V
Current - Continuous Drain (Id) @ 25°C	49A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	22.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	19.8 ns
Turn-Off Delay Time	44.5 ns
Continuous Drain Current (ID)	49A
JEDEC-95 Code	MO-235
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	105W Tc