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BUK7K5R6-30E,115

MOSFET 2N-CH 30V 40A LFPAK56D

Manufacturer: Nexperia USA Inc.
Origchip NO: 554-BUK7K5R6-30E,115
Package: SOT-1205, 8-LFPAK56
Datasheet: PDF
Stock: 970
Description: MOSFET 2N-CH 30V 40A LFPAK56D (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SOT-1205, 8-LFPAK56
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Additional Feature	AVALANCHE RATED
Max Power Dissipation	64W
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	8
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9.2 ns
Power - Max	64W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1969pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	29.7nC @ 10V
Rise Time	10ns
Fall Time (Typ)	12.9 ns
Turn-Off Delay Time	17.9 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.0056Ohm
Pulsed Drain Current-Max (IDM)	314A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant