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BSC018N04LSGATMA1

Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP

Manufacturer: Infineon Technologies
Origchip NO: 376-BSC018N04LSGATMA1
Package: 8-PowerTDFN
Datasheet: PDF
Stock: 914
Description: Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP (Kg)

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Details

Tags

Parameters
Factory Lead Time	26 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 85μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	12000pF @ 20V
Current - Continuous Drain (Id) @ 25°C	30A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	7.4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0025Ohm
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	295 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead