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BC848CDW1T1G

ON Semi BC848CDW1T1G NPN Bipolar Transistor; 0.1 A; 30 V; 6-Pin SOT-363

Manufacturer: ON Semiconductor
Origchip NO: 598-BC848CDW1T1G
Package: 6-TSSOP, SC-88, SOT-363
Datasheet: PDF
Stock: 156
Description: ON Semi BC848CDW1T1G NPN Bipolar Transistor; 0.1 A; 30 V; 6-Pin SOT-363 (Kg)

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Details

Tags

Parameters
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	30V
Max Power Dissipation	380mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Frequency	100MHz
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Power Dissipation	380mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	100MHz
Transistor Type	2 NPN (Dual)
Collector Emitter Voltage (VCEO)	30V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	420 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	30V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	600mV
Max Breakdown Voltage	30V
Collector Base Voltage (VCBO)	30V
Emitter Base Voltage (VEBO)	5V
hFE Min	420
Height	1.1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free