All Products

View All >>

APTGL90DH120T3G

Trans IGBT Module N-CH 1.2KV 110A 16-Pin Case SP-3

Manufacturer: Microsemi Corporation
Origchip NO: 523-APTGL90DH120T3G
Package: SP3
Datasheet: -
Stock: 437
Description: Trans IGBT Module N-CH 1.2KV 110A 16-Pin Case SP-3 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to XINJIADA.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time	22 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	16
Operating Temperature	-40°C~175°C TJ
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	385W
Number of Elements	1
Configuration	Asymmetrical Bridge
Element Configuration	Dual
Power - Max	385W
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	110A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	4.4nF
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 75A
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	4.4nF @ 25V
VCEsat-Max	2.2 V
RoHS Status	RoHS Compliant