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2N4393-E3

VISHAY SILICONIX 2N4393-E3 JFET Transistor, JFET, -55 V, 5 mA, 30 mA, -3 V, TO-206AA, JFET

Manufacturer: Vishay Siliconix
Origchip NO: 880-2N4393-E3
Package: TO-206AA, TO-18-3 Metal Can
Datasheet: PDF
Stock: 472
Description: VISHAY SILICONIX 2N4393-E3 JFET Transistor, JFET, -55 V, 5 mA, 30 mA, -3 V, TO-206AA, JFET (Kg)

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Details

Tags

Parameters
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~200°C TJ
Packaging	Bulk
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	100Ohm
Additional Feature	LOW INSERTION LOSS
Subcategory	Other Transistors
Max Power Dissipation	1.8W
Terminal Position	BOTTOM
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	260
Current Rating	50mA
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	1.8W
Case Connection	GATE
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Input Capacitance (Ciss) (Max) @ Vds	14pF @ 20V
Breakdown Voltage	-55V
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	5mA
Gate to Source Voltage (Vgs)	-40V
FET Technology	JUNCTION
Drain to Source Resistance	100Ohm
Current - Drain (Idss) @ Vds (Vgs=0)	5mA @ 20V
Voltage - Cutoff (VGS off) @ Id	500mV @ 1nA
Voltage - Breakdown (V(BR)GSS)	40V
Resistance - RDS(On)	100Ohm
Height	5.33mm
Length	5.84mm
Width	5.84mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant