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NX3008PBKV,115

NX3008PBKV - 30 V, 220 mA dual P-channel Trench MOSFET

Manufacturer: Nexperia USA Inc.
Origchip NO: 554-NX3008PBKV,115
Package: SOT-563, SOT-666
Datasheet: PDF
Stock: 747
Description: NX3008PBKV - 30 V, 220 mA dual P-channel Trench MOSFET (Kg)

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Details

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Parameters
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Max Power Dissipation	500mW
Terminal Form	FLAT
Pin Count	6
JESD-30 Code	R-PDSO-G3
Number of Elements	2
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	390mW
Turn On Delay Time	19 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.1 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	46pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	0.72nC @ 4.5V
Rise Time	30ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	220mA
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	-30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	4 Weeks