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IRF7504TRPBF

MOSFET 2P-CH 20V 1.7A MICRO8

Manufacturer: Infineon Technologies
Origchip NO: 376-IRF7504TRPBF
Package: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Datasheet: PDF
Stock: 259
Description: MOSFET 2P-CH 20V 1.7A MICRO8 (Kg)

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	8
Resistance	270mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	-20V
Max Power Dissipation	1.25W
Terminal Form	GULL WING
Current Rating	-1.7A
Base Part Number	IRF7504PBF
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	9.1 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	240pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.7A
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 4.5V
Rise Time	35ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	43 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	-1.7A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	9.6A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	860μm
Length	3mm
Width	3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free