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DMC3021LSD-13

MOSFET N/P-CH 30V 8.5A/7A 8SO

Manufacturer: Diodes Incorporated
Origchip NO: 233-DMC3021LSD-13
Package: 8-SOIC (0.154, 3.90mm Width)
Datasheet: PDF
Stock: 266
Description: MOSFET N/P-CH 30V 8.5A/7A 8SO (Kg)

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Details

Tags

Parameters
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Max Power Dissipation	2.5W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	DMC3021
Pin Count	8
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	767pF @ 10V
Current - Continuous Drain (Id) @ 25°C	8.5A 7A
Gate Charge (Qg) (Max) @ Vgs	16.1nC @ 10V
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time	50.1 ns
Continuous Drain Current (ID)	8.5A
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	4.95mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant